IRF3205

IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.

Drain to source voltage Vds is 100VGate to source voltage is ?20VOn Resistance Rds(on) of 44mohm at Vgs of 10VPower dissipation Pd of 130W at 25?CFeatures:Gate to source voltage is ?20VOn-Resistance Rds(on) of 8mohm at Vgs of 10VPower dissipation (Pd) of 130W at 25?CContinuous drain current (Id) of 110A at Vgs 10V and 25?COperating junction temperature range from -55?C to 175?CApplications: Power Management, Industrial, Portable Devices, Consumer Electronics.