IRF3205

IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.

Drain to source voltage Vds is 100V
Gate to source voltage is ?20V
On Resistance Rds(on) of 44mohm at Vgs of 10V
Power dissipation Pd of 130W at 25?C
Features:
Gate to source voltage is ?20V
On-Resistance Rds(on) of 8mohm at Vgs of 10V
Power dissipation (Pd) of 130W at 25?C
Continuous drain current (Id) of 110A at Vgs 10V and 25?C
Operating junction temperature range from -55?C to 175?C
Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.